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《3D打印-尼龍粉 制造工藝配方精選》


3D打印尼龍粉概述
尼龍粉是一種常用于3D打印的熱塑性材料,具有高強度、耐磨性、耐化學腐蝕性以及良好的機械性能。它廣泛應(yīng)用于選擇性激光燒結(jié)(SLS)、多噴射熔融(MJF)等3D打印工藝。

3D打印尼龍粉的常見類型
尼龍11(PA11):具有良好的抗紫外線和抗沖擊性能,適合戶外使用。
尼龍12(PA12):強度和剛度更高,是SLS打印中最常用的材料之一。
復(fù)合尼龍材料:如玻璃纖維增強尼龍(如Nylon 12 GF Powder)和碳纖維增強尼龍(如Nylon 11 CF Powder),這些材料在強度和剛性上表現(xiàn)更優(yōu)。

3D打印尼龍粉的應(yīng)用領(lǐng)域
工業(yè)制造:用于制造機械零件、齒輪、軸承等,具有良好的耐磨性和機械強度。
汽車與航空航天:用于制造功能測試部件、發(fā)動機進氣歧管、輕量化結(jié)構(gòu)件等。
醫(yī)療領(lǐng)域:可用于制造生物相容性好的醫(yī)療器械。
消費品:如運動器材、鞋底模具等。

3D打印尼龍粉的優(yōu)勢
高精度與復(fù)雜結(jié)構(gòu):SLS和MJF工藝可以實現(xiàn)復(fù)雜幾何形狀的打印,無需支撐結(jié)構(gòu)。
材料可重復(fù)使用:未燒結(jié)的尼龍粉末可以回收再利用,減少浪費。
良好的表面處理:尼龍粉末打印的部件表面可以進行噴砂、噴漆等后處理。

3D打印尼龍粉的局限性
吸濕性:尼龍材料容易吸收空氣中的水分,可能導致打印件變形或性能下降。
表面粗糙度:MJF打印的部件表面相對粗糙,需要額外的后處理。
材料選擇有限:與FDM等其他3D打印技術(shù)相比,SLS和MJF的材料種類相對較少。

總結(jié)
3D打印尼龍粉因其優(yōu)異的機械性能和廣泛的適用性,在工業(yè)制造、汽車、航空航天等領(lǐng)域具有重要的應(yīng)用價值。然而,其吸濕性和表面粗糙度等局限性也需要在實際應(yīng)用中加以注意。


2025版《國際光刻膠制造工藝配方精選匯編》

2025版《國際光刻膠制造工藝配方精選匯編》

極紫外光刻膠(EUV光刻膠)技術(shù):EUV光刻膠是目前最先進的光刻膠技術(shù)之一,主要用于極紫外光刻工藝,能夠?qū)崿F(xiàn)極小的線寬和高分辨率的圖形轉(zhuǎn)移,是制造高端芯片的關(guān)鍵材料例如,JSR公司在2011年就與SEMATECH聯(lián)合開發(fā)出用于15nm工藝的化學放大型EUV光刻膠東京應(yīng)化(TOK)也在EUV光刻膠領(lǐng)域處于領(lǐng)先地位,其在2020年擁有EUV光刻膠51.8%的市占率。

高靈敏度和高分辨率光刻膠技術(shù):通過優(yōu)化光刻膠的化學配方和結(jié)構(gòu),提高光刻膠對光的靈敏度和分辨率,從而實現(xiàn)更小的圖形尺寸和更高的集成度如Inpria生產(chǎn)的包含氧化錫的EUV光刻膠,具有良好的靈敏度,將EUV的吸收效率提升了4倍,并且可以實現(xiàn)更簡單的制造流程和更大的工藝窗口。

多層膜光刻技術(shù):為了進一步提高光刻分辨率,采用多層膜光刻技術(shù),通過在光刻膠層之間增加特殊的膜層,減少光的反射和散射,提高光刻的對比度和分辨率。

  本資料是收錄涉及《國際光刻膠制造工藝配方精選匯編》最新專利技術(shù)資料,資料中包括制造原料、配方、生產(chǎn)工藝、產(chǎn)品性能測試及標準、實際應(yīng)用效果,技術(shù)指標,解決的具體問題等等,是企業(yè)提高產(chǎn)品質(zhì)量和發(fā)展新產(chǎn)品的重要、實用、超值和難得的技術(shù)資料。


【資料內(nèi)容】制造工藝及配方
【資料語種英文
【項目數(shù)量】56項
電子版】1680元(PDF文檔  郵件發(fā)送)


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極紫外光刻膠(EUV光刻膠)技術(shù):EUV光刻膠是目前最先進的光刻膠技術(shù)之一,主要用于極紫外光刻工藝,能夠?qū)崿F(xiàn)極小的線寬和高分辨率的圖形轉(zhuǎn)移,是制造高端芯片的關(guān)鍵材料例如,JSR公司在2011年就與SEMATECH聯(lián)合開發(fā)出用于15nm工藝的化學放大型EUV光刻膠東京應(yīng)化(TOK)也在EUV光刻膠領(lǐng)域處于領(lǐng)先地位,其在2020年擁有EUV光刻膠51.8%的市占率。

高靈敏度和高分辨率光刻膠技術(shù):通過優(yōu)化光刻膠的化學配方和結(jié)構(gòu),提高光刻膠對光的靈敏度和分辨率,從而實現(xiàn)更小的圖形尺寸和更高的集成度如Inpria生產(chǎn)的包含氧化錫的EUV光刻膠,具有良好的靈敏度,將EUV的吸收效率提升了4倍,并且可以實現(xiàn)更簡單的制造流程和更大的工藝窗口。

多層膜光刻技術(shù):為了進一步提高光刻分辨率,采用多層膜光刻技術(shù),通過在光刻膠層之間增加特殊的膜層,減少光的反射和散射,提高光刻的對比度和分辨率。

  本資料是收錄涉及《國際光刻膠制造工藝配方精選匯編》最新專利技術(shù)資料,資料中包括制造原料、配方、生產(chǎn)工藝、產(chǎn)品性能測試及標準、實際應(yīng)用效果,技術(shù)指標,解決的具體問題等等,是企業(yè)提高產(chǎn)品質(zhì)量和發(fā)展新產(chǎn)品的重要、實用、超值和難得的技術(shù)資料。


【資料內(nèi)容】制造工藝及配方
【資料語種英文
【項目數(shù)量】56項
電子版】1680元(PDF文檔  郵件發(fā)送)


目錄

序號項目名稱研制單位
1Enhanced Euv Materials, Photoresists And Methods Of Their UseROBINSON ALEX P G?[GB]
JACKSON ED?[US]
O'CALLAGHAN GREGORY?[GB]
ROTH JOHN?[US]
MCCLELLAND ALEXANDRA?[GB]
LADA TOM?[US]
POPESCU CARMEN?[GB]
2Euv Lithography Using Polymer Crystal-Based ReticlesREKHI SANDEEP
WALLING THOMAS JOHN FARRELL
PICHUMANI PRADEEP SAILAM
3Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using SameHONG SUKWON?[KR]
HWANG CHAN CUK?[KR]
KIM DO WON?[KR]
BYEON JIN HWAN?[KR]
AHN JAE BOONG?[KR]
4Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The SamePARK CHUL KYUN
HONG JU HEE
CHOI MUN SU
KIM DONG HOI
5Pellicle For Euv LithographyHONG JU-HEE?[KR]
PARK CHUL-KYUN?[KR]
CHOI MUN-SU?[KR]
KIM DONG-HOI?[KR]
6Method To Reduce Line Edge Roughness For Euv Photoresist PatternWANG XIN-KE?[CN]
SHEN ZE-QING?[CN]
SINGHA ROY SUSMIT?[IN]
MALLICK ABHIJIT BASU?[US]
BHUYAN BHASKAR JYOTI?[IN]
TANG JIECONG?[SG]
SUDIJONO JOHN?[US]
SALY MARK?[US]
7Enhanced Euv Photoresists And Methods Of Their UseROBINSON ALEX P G?[GB]
JACKSON EDWARD?[US]
ROTH JOHN?[US]
LADA TOM?[US]
O'CALLAGHAN GREG?[GB]
8Organometallic Tin Clusters As Euv PhotoresistLU FENG?[US]
9Euv Low Roughness Euv LithographyWISE RICHARD
SHAMMA NADER
10Enhanced Euv Photoresist And Methods Of Use ThereofROBINSON ALEX P G
JACKSON EDWARD
ROTH JOHN
LADA TOM
O 'CALLAGHAN GREG
11Pellicle For Euv LithographyHONG JU HEE
JUNG MIN WOOK
CHOI MUN SU
12Method Of Euv LithographyCHEN TAI-YU?[TW]
KHIVSARA SAGAR DEEPAK?[IN]
CHIEN SHANG-CHIEH?[TW]
LAM KAI TAK?[SG]
YU SHENG-KANG?[TW]
13Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The SameLEE GEUN SU?[KR]
LEE YEONG SEON
SEONG YEON HEE
KIM SEOK HYUN
KIM YOUNG CHAN
CHEON JONG HYEON
LEE SEUNG HYUK
14Pellicle For Euv Lithography Masks And Methods Of Manufacturing ThereofHSU PEI-CHENG?[TW]
SUN TING-PI?[TW]
LEE HSIN-CHANG?[TW]
15Euv Metal Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
16Euv Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
17Euv/Eb Photoresist As Well As Preparation Method And Application ThereofFANG SHUNONG
WANG SU
TANG CHEN
18Euv Photomask And Manufacturing Method Of The SameHSU FENG YUAN?[TW]
SHEN TRAN-HUI?[TW]
HSU CHING-HSIANG?[TW]
19Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their ManufactureFATEMEH DAVODI
PAUL CHATELAIN
CHARLES DEZELAH
20Method Of Forming Carbon-Based Spacers For Euv Photoresist PatternsWANG XINKE
SHEN ZEQING
ROY SUMEET SINGH
MALLIK ABHIJIT BASU
BHUYAN BHASKAR JYOTI
TANG JIECONG
SUDIJONO JOHN
SALY MARK
21Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv LithographyLIMA MARCIO D?[US]
GRAHAM MARY VIOLA?[US]
UEDA TAKAHIRO?[US]
22Euv Membrane For Euv Lithography And Manufacturing Method For The SameYU LAN
SEO KYOUNG WON
PARK JIN SU
YANG SEONG JU
HONG SEONG GYU
LEE HWA CHOL
KIM CHEONG
KIM KYOUNG SOO
YUN WOO HYUN
CHO SANG JIN
LEE DONG HOON
LEE SO YOON
PARK SEONG HWAN
KIM YONG SU
KANG HONG GU
CHOI JAE HYUCK
23Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using ItHORIKOSHI JUN?[JP]
24Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
25Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI?[KR]
26Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced PadKIM YONG KI?[KR]
27Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI?[KR]
28Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv DosePRASAD RAJESH?[US]
LIN YUNG-CHEN?[US]
HUANG ZHIYU?[US]
WANG FENGLIN?[US]
LANG CHI-I?[US]
HWANG HOYUNG DAVID?[US]
AREVALO EDWIN A?[US]
SHIM KYUHA?[US]
29Method Of Manufacturing Euv Photo MasksLEE HSIN-CHANG?[TW]
HSU PEI-CHENG?[TW]
LIEN TA-CHENG?[TW]
WANG TZU YI?[TW]
30Blankmask And Photomask For Euv Lithography With Backside Conductive LayerWOO MI KYUNG
PARK MIN KYU
YANG CHUL KYU
31Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The SameJANG SUNG WOO
LEE SUN PYO
JUNG EUI HAN
32Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet LithographyKIM YONG KI?[KR]
33Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or BothROBINSON ALEX P G?[GB]
MCCLELLAND ALEXANDRA?[GB]
O '' CALLAGHAN GREG?[GB]
JACKSON ED?[US]
NGUYEN VAN HUY?[GB]
MELONI FERNANDA?[IT]
34Phase Shift Blank Mask And Photomask For Euv LithographyKIM YONG-DAE
LEE JONG-HWA
YANG CHUL KYU
35Methods For Making Euv Patternable Hard MasksWU CHENGHAO
TIMOTHY WILLIAM WEIDMAN
KATIE NARDI
36Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofCHAO TZU-ANG?[TW]
CHENG CHAO-CHING?[TW]
WANG HAN?[TW]
37Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
38Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods ThereofAKAGI DAIJIRO?[JP]
KAWAHARA HIROTOMO?[JP]
UNO TOSHIYUKI?[JP]
ISHIKAWA ICHIRO?[JP]
SAKAKI KENICHI?[JP]
39Thin Film For Euv Lithography Mask And Method Of Manufacturing SameXU BEICHENG
LI WEIHAO
LI HUANLING
LI XINCHANG
LIN JINXIANG
40Euv Light Generation System And Production Method Of Electronic DeviceNISHIMURA YUICHI
UENO YOSHIFUMI
41Thin Film For Euv Lithography Mask And Method Of Manufacturing SameSON JUNG-PIL
XU BEICHENG
LI XINCHANG
42Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing SameJI MINGHUA
DONG YUHU
HUANG ZAOHONG
43Euv Photomask And Manufacturing Method ThereofXUE WENZHANG
LIAN DACHENG
LI XINCHANG
44Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The SameCHOI MUN SU
HONG JU HEE
PARK CHUL KYUN
KIM DONG HOI
45Detection Method Of Euv Pellicle StatusLIU YEN-HAO?[TW]
WANG SHAO-HUA?[TW]
ZHANG ZHENG-HAO?[TW]
LIN FAN-CHI?[TW]
KUO CHUEH-CHI?[TW]
CHEN LI-JUI?[TW]
LIU HENG-HSIN?[TW]
46Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet LithographyKIM YONG KI?[KR]
47Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet LithographyKIM YONG KI?[KR]
48Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods ThereforAKAGI DAIJIRO?[JP]
KAWAHARA HIROTOMO?[JP]
SASAKI KENICHI?[JP]
ISHIKAWA ICHIRO?[JP]
UNO TOSHIYUKI?[JP]
49Extreme Ultraviolet Lithography Method And Euv PhotomaskLEE CHIEN-MIN?[TW]
CHEN YEN-LIANG?[TW]
LIN SHY-JAY?[TW]
CHEN LEE-FENG?[TW]
TAI KUO LUN?[TW]
50Phase Shift Blankmask And Photomask For Euv LithographyPARK MIN-KWANG?[KR]
PARK MIN-KYU?[KR]
WOO MI-KYUNG?[KR]
YANG CHUL-KYU?[KR]
KIM YONG-DAE?[KR]
51Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The SamePARK MIN-KYU?[KR]
WOO MI-KYUNG?[KR]
PARK MIN-KWANG?[KR]
YANG CHUL-KYU?[KR]
52Membrane For Euv LithographyHOUWELING ZOMER SILVESTER?[NL]
GHIASI KABIRI MAHNAZ?[NL]
GIESBERS ADRIANUS JOHANNES MARIA?[NL]
BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA?[NL]
53Preferential Infiltration In Lithographic Process Flow For Euv Car ResistALVA GABRIELA?[US]
HAN ZHEN-XING?[CN]
SACHAN MADHUR?[IN]
LANG CHI-I?[US]
ZHOU LIN?[CN]
LIU LEQUN?[US]
KAZEM NASRIN?[US]
54Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing ThereofLIMA MARCIO D?[US]
UEDA TAKAHIRO?[US]
55Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofLIN YUN-YUE?[TW]
56Methods And Related Systems For Depositing Euv Sensitive FilmsPATEL KISHAN ASHOKBHAI?[IN]
TOMCZAK YOANN?[FR]
DEZELAH CHARLES?[US]
ZYULKOV IVAN?[RU]
DE ROEST DAVID KURT?[BE]
GIVENS MICHAEL?[US]
PIUMI DANIELE?[IT]


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